Forming a conductive pattern on a substrate

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

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C438S628000, C438S644000, C438S669000, C257S763000, C257S099000, C257S079000, C257S082000, C257S083000, C428S209000, C428S210000

Reexamination Certificate

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11146498

ABSTRACT:
A method of forming a conductive pattern on a substrate. The method comprising providing a substrate carrying a conductive layer; forming a first portion of the conductive pattern by exposing the conductive layer to a laser and controlling the laser to remove conductive material around the edge(s) of desired conductive region(s) of the first portion; and laying down an etch resistant material on the conductive layer, the etch resistant material defining a second portion of the conductive pattern, removing conductive material from those areas of the second portion not covered by the etch resistant material, and then removing the etch resistant material.

REFERENCES:
patent: 2002/0072228 (2002-06-01), Kuo
patent: 2003/0146019 (2003-08-01), Hirai

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