Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-09-18
2007-09-18
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C438S628000, C438S644000, C438S669000, C257S763000, C257S099000, C257S079000, C257S082000, C257S083000, C428S209000, C428S210000
Reexamination Certificate
active
11146498
ABSTRACT:
A method of forming a conductive pattern on a substrate. The method comprising providing a substrate carrying a conductive layer; forming a first portion of the conductive pattern by exposing the conductive layer to a laser and controlling the laser to remove conductive material around the edge(s) of desired conductive region(s) of the first portion; and laying down an etch resistant material on the conductive layer, the etch resistant material defining a second portion of the conductive pattern, removing conductive material from those areas of the second portion not covered by the etch resistant material, and then removing the etch resistant material.
REFERENCES:
patent: 2002/0072228 (2002-06-01), Kuo
patent: 2003/0146019 (2003-08-01), Hirai
Bittner Christoph
Bromley Nigel Ingram
Gouch Martin Philip
Angadi Maki
FFEI Limited
Norton Nadine
Sughrue & Mion, PLLC
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