Formation of transistor having a strained channel region...

Details Formation of transistor having a strained channel region... Formation of transistor having a strained channel region...

2007-03-21

2009-08-04

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S186000, C438S197000, C438S299000, C257SE21431, C257SE21446

Reexamination Certificate

active

07569437

ABSTRACT:
By forming a semiconductor alloy in a silicon-based active semiconductor region prior to the gate patterning, material characteristics of the semiconductor alloy itself may also be exploited in addition to the strain-inducing effect thereof. Consequently, device performance of advanced field effect transistors may be even further enhanced compared to conventional approaches using a strained semiconductor alloy in the drain and source regions.

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Communication Dated Jul. 5, 2007 for serial No. 10 2006 035 669.1-33.

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