Formation of through-wafer electrical interconnections and...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21575

Reexamination Certificate

active

07662710

ABSTRACT:
Providing through-wafer interconnections in a semiconductor wafer includes forming a sacrificial membrane in a pre-existing semiconductor wafer, depositing metallization over one side of the wafer so as to cover exposed portions of the sacrificial membrane facing the one side of the wafer, removing exposed portions of the sacrificial membrane facing the other side of the wafer, and depositing metallization over the other side of the wafer so as to contact the previously deposited metallization. Techniques also are disclosed for providing capacitive and other structures using thin metal membranes.

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patent: 2006/0131691 (2006-06-01), Roozeboom et al.
patent: 2 150 749 (1985-07-01), None

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