Formation of thin channels for TFT devices to ensure low...

Details Formation of thin channels for TFT devices to ensure low... Formation of thin channels for TFT devices to ensure low...

2005-11-01

2005-11-01

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S311000, C257S411000, C257S640000, C257S649000

Reexamination Certificate

active

06960794

ABSTRACT:
A thin film transistor with a channel less than 100 angstroms thick, preferably less than 80 angstroms thick, preferably less than 60 angstroms thick. The very thin channel reduces variability of threshold voltage from one TFT to the next. This is particularly advantageous for TFT memory arrays. It is possible that an extremely thin channel restricts the size of grains, forcing many small grains to be formed.

REFERENCES:
patent: 5229631 (1993-07-01), Woo
patent: 5548132 (1996-08-01), Batra et al.
patent: 5693959 (1997-12-01), Inoue et al.
patent: 6093577 (2000-07-01), van der Groen et al.
patent: 6413838 (2002-07-01), Itoh
patent: 6420219 (2002-07-01), Batra et al.
patent: 6646300 (2003-11-01), Ishii et al.
patent: 6677204 (2004-01-01), Cleeves et al.
Hodges et al., Analysis and Design of Digital Integrated circuits, 2 ed, p. 30-34.
Miyasaka, Mitsutoshi.,et al. , “Effects of Semiconductor Thickness on Poly-Crystalline Silicon Thin Film Transistors”,Jpn. J. Appl. Phys. vol. 35(1996)Part 1, No. 2B, (Feb. 1996),923-929.

Affiliated with

Also associated with

Rating

Formation of thin channels for TFT devices to ensure low... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Formation of thin channels for TFT devices to ensure low..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of thin channels for TFT devices to ensure low... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3475034