Formation of submicrometer lines

Details Formation of submicrometer lines Formation of submicrometer lines

1986-03-28

1987-03-10

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 156657, 1566591, 156662, 20419232, B44C 122, H01L 21306, C23F 102, C03C 1500

Patent

active

046489398

ABSTRACT:
The formation of elongated structures, such as lines, having a linewidth substantially less than one micrometer is described. An elongated structure of a first material having opposed sides, a rounded surface between the sides and a width typically of about one micrometer or greater is formed on a substrate. The sides of the structure are at least partially coated with a layer of a second material which will etch at a slower rate than the first material. The coating may completely cover the structure. The structure is anisotropically etched. Since the coating protects the sides of the structure, etching proceeds in the center to form two parallel lines, each significantly below one micrometer in width. In one embodiment, formation of the protective coating and etching of the structure are carried out simultaneously.

REFERENCES:
patent: 4547261 (1985-10-01), Maa et al.
Hatzakis et al., IBM J. Res. Develop., vol. 24, No. 4, pp. 452-460, 1980.
Hatzakis et al., J. Electrochem. Soc., vol. 116, No. 7, pp. 1033-1037, 1969.
Milgram, J. Vac. Sci. Technol. B, vol. 1, No. 2, pp. 490-493, 1983.
Bjorkolm et al., J. Applied Physics, vol. 57, No. 1, pp. 2402-2405, 1985.

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