Formation of spacers for FinFETs (Field Effect Transistors)

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S197000, C438S585000, C257SE21400

Reexamination Certificate

active

07399664

ABSTRACT:
A structure and a method for forming the same. The structure includes (a) a substrate, (b) a semiconductor fin region on top of the substrate, (c) a gate dielectric region on side walls of the semiconductor fin region, and (d) a gate electrode region on top and on side walls of the semiconductor fin region. The gate dielectric region (i) is sandwiched between and (ii) electrically insulates the gate electrode region and the semiconductor fin region. The structure further includes a first spacer region on a first side wall of the gate electrode region. A first side wall of the semiconductor fin region is exposed to a surrounding ambient. A top surface of the first spacer region is coplanar with a top surface of the gate electrode region.

REFERENCES:
patent: 6838322 (2005-01-01), Pham et al.
patent: 6927104 (2005-08-01), Lee et al.
patent: 6951784 (2005-10-01), Anderson et al.
patent: 7105390 (2006-09-01), Brask et al.
patent: 7288805 (2007-10-01), Anderson et al.
patent: 7326608 (2008-02-01), Lee et al.
patent: 7348254 (2008-03-01), Park
patent: 2006/0014338 (2006-01-01), Doris et al.
patent: 2006/0154426 (2006-07-01), Anderson et al.
patent: 2006/0197147 (2006-09-01), Anderson et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Formation of spacers for FinFETs (Field Effect Transistors) does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Formation of spacers for FinFETs (Field Effect Transistors), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of spacers for FinFETs (Field Effect Transistors) will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2746215

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.