Formation of single crystal semiconductor nanowires

Details Formation of single crystal semiconductor nanowires Formation of single crystal semiconductor nanowires

2011-03-01

2011-03-01

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257SE21090, C257SE21171, C438S502000, C977S762000, C977S813000

Reexamination Certificate

active

07897494

ABSTRACT:
A method is provided for growing mono-crystalline nanostructures onto a substrate. The method comprises at least the steps of first providing a pattern onto a main surface of the substrate wherein said pattern has openings extending to the surface of the substrate, providing a metal into the openings of the pattern on the exposed main surface, at least partly filling the opening with amorphous material, and then annealing the substrate at temperatures between 300° C. and 1000° C. thereby transforming the amorphous material into a mono-crystalline material by metal mediated crystallization to form the mono-crystalline nanostructure.

REFERENCES:
patent: 2007/0232007 (2007-10-01), Forbes
patent: 1700935 (2006-09-01), None
patent: 2007216369 (2007-08-01), None
patent: WO 2006/046178 (2006-05-01), None
Liu et al., Japanese Journal of Applied Physics vol. 46, No. 9B, 2007, pp. 6343-6345.
Landholt, D. “Electrochemical and Materials Science Aspects of Alloy Deposition”, Electrochimica Acta, vol. 39, 1075-1090, 1994.
Landolt, D., “Electrochemical and Materials Science Aspects of Alloy Deposition”, Electrochimica Acta, vol. 29, No. 8/9, pp. 1075-1090, 1994.
Liu et al., “Growth of amorphous silicon nanowires”, Chemical Physics Letters 341 (2001) 523-528.
Liu et al., “Low Temperature Synthesis of Single Crystalline Silicon Nanowires Using Anodic Aluminum Oxide Template”, Japanese Journal of Applied Physics, vol. 46, No9B, 2007, pp. 6343-6345.

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