Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-08-01
2006-08-01
Nguyen, Ha (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S407000, C438S766000
Reexamination Certificate
active
07084050
ABSTRACT:
A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implanted-ion rich region in the Si-containing substrate. The implanted-ion rich region has a sufficient ion concentration such that during a subsequent anneal at high temperatures a barrier layer that is resistant to Ge diffusion is formed. Next, a Ge-containing layer is formed on a surface of the Si-containing substrate, and thereafter a heating step is performed at a temperature which permits formation of the barrier layer and interdiffusion of Ge thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer.
REFERENCES:
patent: 4866498 (1989-09-01), Myers
patent: 5461243 (1995-10-01), Ek et al.
patent: 5563428 (1996-10-01), Ek et al.
patent: 5667586 (1997-09-01), Ek et al.
patent: 5759898 (1998-06-01), Ek et al.
patent: 5846867 (1998-12-01), Gomi et al.
patent: 6118151 (2000-09-01), Tsutsu
patent: 6190975 (2001-02-01), Kubo et al.
patent: 6515335 (2003-02-01), Christiansen et al.
patent: 6593625 (2003-07-01), Christiansen et al.
patent: 6607948 (2003-08-01), Sugiyama et al.
patent: 6617034 (2003-09-01), Hamaguchi et al.
patent: 2002/0030227 (2002-03-01), Bulsara et al.
patent: 2002/0185686 (2002-12-01), Christiansen et al.
patent: 2003/0139000 (2003-07-01), Bedell et al.
patent: 2003/0211711 (2003-11-01), Seki et al.
patent: 2004/0012075 (2004-01-01), Bedell et al.
Bedell Stephen W.
de Souza Joel P.
Fogel Keith E.
Sadana Devendra K.
Shahidi Ghavam G.
Lee Cheung
Nguyen Ha
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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