Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-05
1999-11-02
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257335, 257336, 257337, 257338, 257339, 257344, 257345, 257900, H01L 2994
Patent
active
059776005
ABSTRACT:
The formation of a shortage protection region is disclosed. In one embodiment, a method includes three steps. In the first step, a first ion implantation is applied to form lightly doped regions within a semiconductor substrate adjacent to sidewalls of a gate over the substrate. In the second step, two spaces are formed on the substrate, each adjacent to a sidewall of the gate, so that a second ion implantation forms heavily doped regions within the substrate adjacent to the first spacers. In the third step, two additional spacers are formed on the substrate, each overlapping and extending beyond a corresponding spacer previously formed. Thus, a third ion implantation forms lightly doped shortage protection regions within the substrate adjacent to the spacers most recently formed.
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patent: 5389811 (1995-02-01), Poucher et al.
patent: 5440165 (1995-08-01), Mitsunaga et al.
patent: 5512771 (1996-04-01), Hiroki et al.
patent: 5565700 (1996-10-01), Chou et al.
patent: 5719425 (1998-02-01), Akram et al.
Cheek Jon
Fulford H. James
Wristers Derick
Abraham Fetsum
Advanced Micro Devices , Inc.
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