Formation of self-organized stacked islands for self-aligned...

Details Formation of self-organized stacked islands for self-aligned... Formation of self-organized stacked islands for self-aligned...

2006-07-18

2006-07-18

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S258000, C438S526000, C257S019000

Reexamination Certificate

active

07078335

ABSTRACT:
Method for making a semiconductor structure is proposed. It comprises the steps: —providing a base layer (10) having a first lattice constant, —forming buried islands on the base layer (10) having a second lattice constant that is smaller or larger than the first lattice constant, —at least partially covering the base layer (10) and the buried islands with a cover layer (14), whereby the cover layer (14) has a locally increased or reduced lattice constant in areas above the buried islands, —growing small islands (15) on the areas of the cover layer (14) with locally increased or reduced lattice constant, —depositing a thin layer (16) at least partially covering the cover layer (14) and the small islands (15), —at least partially removing the small islands (15) to provide for an opening (17) being positioned exactly above the buried islands.

REFERENCES:
patent: 6271551 (2001-08-01), Schmitz et al.
patent: 6727550 (2004-04-01), Tezuka et al.
patent: 6841410 (2005-01-01), Sasaoka
patent: 6852638 (2005-02-01), Johansson et al.

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