Formation of self-aligned overlapping bitline contacts with sacr

Details Formation of self-aligned overlapping bitline contacts with sacr Formation of self-aligned overlapping bitline contacts with sacr

1995-09-27

1998-03-03

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

437631, 437639, 437692, H01L 214763

Patent

active

057233810

ABSTRACT:
A method of forming a self-aligned overlapping bitline contact, includes steps of first depositing a sacrificial polysilicon on a spacer dielectric film, and thereafter patterning the polysilicon. The polysilicon film is a sacrificial fill-in for a bitline contact stud. The method further includes depositing a middle-of-line (MOL) oxide on the polysilicon, and planarizing the MOL oxide by chemical-mechanical polishing (CMP). Thereafter, the polysilicon is etched and the spacer dielectric film is etched to form a self-aligned bitline contact.

REFERENCES:
patent: 5158898 (1992-10-01), Hayden et al.

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