Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-09
2007-10-09
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S279000, C438S586000, C438S666000, C438S667000, C438S669000, C438S637000, C438S675000, C438S704000
Reexamination Certificate
active
11495437
ABSTRACT:
Methods of forming a contact structure for semiconductor assemblies are described. One method provides process steps to create an inner dielectric isolation layer after the contact region is protected, which is followed by the formation of the self-aligned contact structures. A second method provides process steps to create an inner dielectric isolation layer after the self-aligned contact structures are formed.
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Burgess Byron N.
Kim Hyun T.
Au Bac H.
Micro)n Technology, Inc.
Wilczewski Mary
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