Formation of planar dielectric layers using liquid interfaces

Details Formation of planar dielectric layers using liquid interfaces Formation of planar dielectric layers using liquid interfaces

1997-11-07

2000-08-15

Smith, Matthew

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438631, 438787, 438799, 438615, H01L 21469

Patent

active

061036382

ABSTRACT:
A method and apparatus for forming a planar layer on a surface of a microelectronic substrate. The method comprises controlling a temperature of a liquid support material to be at least an annealing temperature of material comprising the planar layer. In one embodiment, the planar layer material has a lower density than the liquid support material and the method further comprises floating the planar layer material upon the liquid support material so that the planar layer material attains a temperature of at least its annealing temperature. The planar layer material forms a planar surface at an interface with the support material and is adhered at an opposite surface to the substrate to form a planar layer thereon. In another embodiment, the planar layer material is adhered to a surface of the substrate. The planar layer material is then engaged with the liquid support material so that the planar layer material attains a temperature of at least its annealing temperature, forming a planar surface at an interface with the liquid support material.

REFERENCES:
patent: 5434107 (1995-07-01), Paranjpe
Wolf, Stanley. "Silicon Processing For The VLSI Era", vol. 2 : Profess Integration, USPTO Scientific Library, pp. 200, 223, 1990.

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