Formation of patterned film over semiconductor structure

Details Formation of patterned film over semiconductor structure Formation of patterned film over semiconductor structure

1983-03-14

1983-12-13

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 1566591, 204192E, 427259, 427282, 427305, 430317, B44C 122, C03C 1500, C03C 2506

Patent

active

044203659

ABSTRACT:
A novel process is disclosed for the selective etching of a protective layer over a substrate according to a predetermined pattern, which does not involve the use of chemical vapor deposition or vacuum techniques. The process incorporates the techniques of electroless metal deposition after first applying a mask which is positive with respect to the predetermined pattern. In alternative embodiments, the application to the masked protective layer of an agent catalytic to the reception of electroless metal deposition is followed by either immersion in an electroless plating bath and subsequent mask removal, or by mask removal and subsequent immersion in the electroless plating bath. In either embodiment, the protective layer is effectively masked and patterned for plasma etching. The process is useful in forming openings in the protective layer to permit selective doping of the underlying substrate.

REFERENCES:
patent: 3794536 (1974-02-01), Muska
patent: 4335506 (1982-06-01), Chiu et al.
patent: 4352716 (1982-10-01), Schaible et al.
patent: 4375390 (1983-03-01), Anderson et al.

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