Formation of oxide films by reactive sputtering

Details Formation of oxide films by reactive sputtering Formation of oxide films by reactive sputtering

1988-06-22

1989-07-18

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419216, 20419222, 20419223, 20419226, 20419229, C23C 1434, C23C 1408

Patent

active

048490814

ABSTRACT:
In reactive sputtering of silicon, titanium, aluminum or tin in an oxygen-containing atmosphere to deposit a layer of the corresponding oxide on a substrate, the deposition rate is markedly enhanced by addition of chlorine to the atmosphere. The resulting films contain at most minor amounts of chlorine, so that mechanical, chemical and optical properties of the films are not substantially altered by use of chlorine in the process.

REFERENCES:
patent: 3477936 (1969-11-01), Gillery et al.
W. D. Munz et al., Thin Solid Films, vol. 86, pp. 175-181.
J. S. Logan et al., IBM Tech. Disc. Bull., vol. 14, No. 12, May 1972, p. 3690.
G. L. Harding, "High Rate DC Reactively Sputtered Metal-Oxy-Fluorine Dietric Material", Thin Solid Films, vol. 136, pp. 279-287 (1968).

Affiliated with

Also associated with

Rating

Formation of oxide films by reactive sputtering does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Formation of oxide films by reactive sputtering, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of oxide films by reactive sputtering will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-169613