Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-11-07
1999-08-10
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438592, 438649, 438655, 438656, 438662, 438664, 438660, 438683, H01L 21268
Patent
active
059373253
ABSTRACT:
A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.
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"Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi.sub.2 thin films on deep-sub-micron n.sup.+ type polycrystalline silicon lines" J.A. Kittl, D.A. Prinhslow, P.P. Apte and M.F. Pas, 1995 American Institute of Physics, Appl. Phys. Lett. 67(16), Oct. 16, 1995, pp. 2308-2310.
Advanced Micro Devices , Inc.
Bowers Charles
Nguyen Thanh
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