Formation of lightly doped regions under a gate

Details Formation of lightly doped regions under a gate Formation of lightly doped regions under a gate

1997-12-18

2000-03-21

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, H01L 2976

Patent

active

06040602&

ABSTRACT:
The formation of lightly doped regions under a gate of a transistor is disclosed. In one embodiment of the invention, a method includes four steps. In the first step, a gate is formed over a semiconductor substrate. In the second step, the semiconductor substrate is etched. In the third step, a first ion implantation is applied. Finally, in the fourth step, a second ion implantation is applied, perpendicular to the substrate.

REFERENCES:
patent: 5262337 (1993-11-01), Kim
patent: 5498556 (1996-03-01), Hong et al.
patent: 5698881 (1997-12-01), Yoshitomi et al.
patent: 5721443 (1998-02-01), Wu

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