Formation of high sheet resistance resistors and high...

Details Formation of high sheet resistance resistors and high... Formation of high sheet resistance resistors and high...

2006-05-31

2010-12-21

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S380000, C257S532000, C257S533000, C257S536000, C257SE27016, C257SE29343

Reexamination Certificate

active

07855422

ABSTRACT:
A semiconductor device includes a transistor, a capacitor and a resistor wherein the capacitor includes a doped polysilicon layer to function as a bottom conductive layer with a salicide block (SAB) layer as a dielectric layer covered by a Ti/TiN layer as a top conductive layer thus constituting a single polysilicon layer metal-insulator-polysilicon (MIP) structure. While the high sheet rho resistor is also formed on the same single polysilicon layer with differential doping of the polysilicon layer.

REFERENCES:
patent: 5416351 (1995-05-01), Ito et al.
patent: 6246084 (2001-06-01), Kim
patent: 6545305 (2003-04-01), Randazzo
patent: 2005/0110070 (2005-05-01), Omura

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