Formation of heterostructures by pulsed melting of precursor mat

Details Formation of heterostructures by pulsed melting of precursor mat Formation of heterostructures by pulsed melting of precursor mat

1983-06-20

1985-11-26

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG70, 156DIG73, 156DIG80, 156DIG102, 427 531, 29576T, C30B 108

Patent

active

045553017

ABSTRACT:
A method for forming heterostructures comprising multiconstituent epitaxial material, on a substrate comprises formation of a layer of "precursor" material on the substrate, and momentarily melting the precursor material by pulsed irradiation. The precursor material has the same major chemical constituents as the multiconstituent material to be formed, albeit not necessarily in the same proportions. In at least some systems (e.g., nickel or cobalt silicides on Si), solid state annealing of the re-solidified material often improves substantially the quality of the epitaxial material formed, resulting in substantially defect-free, substantially monocrystalline, material. An exemplary application of the inventive method is the formation of single crystal epitaxial NiSi.sub.2 on Si(100).

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