Formation of epitaxial layers on substrate wafers utilizing an i

Details Formation of epitaxial layers on substrate wafers utilizing an i Formation of epitaxial layers on substrate wafers utilizing an i

1977-11-21

1978-09-12

Rutledge, L. Dewayne

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118 48, 118 495, 118500, 148175, 156613, 219 1049R, 219 1067, 427 45, 427248R, 427299, H01L 21205, C23C 1308, H05B 508

Patent

active

041135474

ABSTRACT:
A method is described for growing epitaxial layers of material on monocrystalline substrates, chiefly silicon, which are substantially free of slip dislocations. The method involves placing an encircling ring of inert, heat resistant material around the rim of the substrate and over the peripheral surface of the substrate to suppress radiation from the peripheral portion of the wafer. The generation of slip dislocations is inhibited because heat is more uniformly distributed throughout the wafer.

REFERENCES:
patent: 3359143 (1967-12-01), Heywang et al.
patent: 3419424 (1968-12-01), Steggewentz et al.
patent: 3436255 (1969-04-01), Harris et al.
patent: 3539759 (1970-11-01), Spiro et al.
patent: 3574006 (1971-04-01), Dersin et al.
patent: 3845738 (1974-11-01), Berkman et al.
patent: 3892940 (1975-07-01), Bloem et al.
Bratter et al., "Apparatus for Epitaxial Deposition," I.B.M. Tech. Discl. Bull., vol. 16, No. 4, Sep. 1973, p. 1279.
Goemans et al., "Control of Slip . . . with Profiled Susceptors," J. Crystal Growth, v. 31, 1975, pp. 308-311.

Affiliated with

Also associated with

Rating

Formation of epitaxial layers on substrate wafers utilizing an i does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Formation of epitaxial layers on substrate wafers utilizing an i, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of epitaxial layers on substrate wafers utilizing an i will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2382722