Formation of conductive lines

Details Formation of conductive lines Formation of conductive lines

1985-03-11

1986-04-29

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29591, 156644, 156646, 156653, 156656, 156657, 1566591, 156662, 204192E, 252 791, 357 65, 427 88, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

045855153

ABSTRACT:
A process of forming conductive lines of fine dimensions over a substrate having topographical features without the formation of conductive stringers is disclosed. Openings of the desired dimensions overlying the topographical features are lithographically defined in a layer of planarizing dielectric material deposited on the substrate. A layer of doped silicon is deposited thereover and isotropically etched to remove all except for the portion in the openings in the dielectric layer. A layer of metal is deposited to overlie only the silicon in the openings in the dielectric layer. The structure is annealed to convert the metal to metal silicide and the remaining dielectric layer is removed.

REFERENCES:
patent: 4410622 (1983-10-01), Dalal et al.
patent: 4411734 (1983-10-01), Maa

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