Formation of atomic scale vertical features for topographic inst

Details Formation of atomic scale vertical features for topographic inst Formation of atomic scale vertical features for topographic inst

1995-10-06

1997-02-04

Breneman, R. Bruce

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 11, C03C 1500

Patent

active

055994644

ABSTRACT:
A calibration target for topographic inspection instruments, operating at sub-micrometer resolution levels, having features on the order of 10 Angstroms in vertical height, an atomic scale distance. The features are formed on a silicon substrate, such as a wafer, by deposition of a thick oxide, such as a typical thermal oxide, over the wafer surface. A pattern of features is patterned and etched to the level of raw silicon at the wafer surface. Areas which have been etched are converted to a thin oxide, which slightly lowers the level of silicon in these areas. All oxide is removed and the slightly lower level of silicon gives rise to features having atomic scale vertical topographic dimensions. Millions of such features are produced simultaneously on a wafer to mimic the effect of haze or micro-roughness on a polished wafer.

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