Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2002-12-11
2010-11-02
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23144, C257SE23167, C257S734000, C257S522000, C257S276000, C257S760000, C257S761000, C257S762000, C257S763000, C257S764000, C257S766000, C257S767000, C257S768000
Reexamination Certificate
active
07825516
ABSTRACT:
In integrated circuit technology; an electromigration and diffusion sensitive conductor of a metal such as copper and processing procedure therefore is provided, wherein, at a planarized chemical mechanical processed interfacing surface, the conductor metal is positioned in a region of a selectable low K eff dielectric material surrounded by a material selected to be protection from outdiffusion and a source of a film thickness cap that is to form over the conductor metal and/or serve as a catalytic layer for electroless selective deposition of a CoWP capping .
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U.S. Appl. No. 09/361,573, filed Jul. 27, 1999, Hu et al., Titled Reduced Electromigration and Stressed Induced Migration of Cu Wires by Surface Coating.
Chiras Stefanie Ruth
Lane Michael Wayne
Malhotra Sandra Guy
Mc Feely Fenton Reed
Rosenberg Robert
Beck Thomas A.
International Business Machines - Corporation
Morris Daniel P.
Williams Alexander O
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