Formation of air gaps in an interconnect structure using a...

Details Formation of air gaps in an interconnect structure using a... Formation of air gaps in an interconnect structure using a...

2007-11-13

2007-11-13

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S421000, C438S422000

Reexamination Certificate

active

10922617

ABSTRACT:
A method of forming air gaps in the interconnect structure of an integrated circuit device. The air gaps may be formed by depositing sacrificial layer over a dielectric layer and then depositing a permeable hard mask over the sacrificial layer. The sacrificial layer is subsequently removed to form air gaps. The permeable hard mask may have a thickness of less than approximately 250 nm, and internal stresses within the permeable hard mask may be controlled to prevent deformation of this layer. Other embodiments are described and claimed.

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