Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-04-29
1998-12-01
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438647, 438642, 438942, 438657, 438669, H01L 2144
Patent
active
058438394
ABSTRACT:
A process has been developed which allows contact between levels of interconnect metallization structures, to occur without the use of via holes, etched in interlevel insulator layers. The process features creation of a raised tungsten plug structure, used to provide contact between underlying active device regions and an overlying interconnect metallization structure. The tungsten plug structure is formed by photolithographic masking and dry etching procedures, thus avoiding increasing the size of a tungsten seam, in the center of the plug structure. In addition the tungsten definition process, also results in a raised plug structure, allowing subsequent contact of interconnect metallization levels to proceed without the use of etched via holes in interlevel insulator layers.
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Ackerman Stephen B.
Chartered Semiconductor Manufacturing Ltd.
Everhart Caridad
Saile George O.
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