Formation of a metal via structure from a composite metal layer

Details Formation of a metal via structure from a composite metal layer Formation of a metal via structure from a composite metal layer

1996-04-08

1997-08-05

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438633, H01L 21283

Patent

active

056542160

ABSTRACT:
A process for creating narrow, metal via structures, used to connect metallization levels, has been developed. The process features initially forming a narrow, metal via structure, and then an underlying interconnect metallization structure, from a single, composite metallization layer. The composite metallization layer is composed of conductive layers, with a specific layer used as an etch stop, allowing creation of a narrow metal via structure, from the top layer of the composite metallization layer, without disturbing the bottom layers. The bottom layers of the composite metallization layer are then patterned to create the underlying interconnect metallization structure.

REFERENCES:
patent: 4917759 (1990-04-01), Fisher et al.
patent: 5114874 (1992-05-01), Custode
patent: 5262354 (1993-11-01), Cote et al.
patent: 5312512 (1994-05-01), Allman et al.
patent: 5358901 (1994-10-01), Fiozdalice et al.
patent: 5393703 (1995-02-01), Olowolafe et al.

Affiliated with

Also associated with

Rating

Formation of a metal via structure from a composite metal layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Formation of a metal via structure from a composite metal layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Formation of a metal via structure from a composite metal layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1074461