Formation of a masking layer on a dielectric region to...

Details Formation of a masking layer on a dielectric region to... Formation of a masking layer on a dielectric region to...

2010-06-14

2011-10-18

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S674000, C257SE21575, C257SE21577

Reexamination Certificate

active

08039383

ABSTRACT:
A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case (particularly in the latter), capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material (e.g., a cobalt alloy, a nickel alloy, tungsten, tantalum, tantalum nitride), a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

REFERENCES:
patent: 6641899 (2003-11-01), Colburn et al.
patent: 2004/0248409 (2004-12-01), Padhi et al.

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