Formation of a contact in a device, and the device including...

Details Formation of a contact in a device, and the device including... Formation of a contact in a device, and the device including...

2006-09-05

2006-09-05

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000

Reexamination Certificate

active

07101785

ABSTRACT:
A method of forming a contact to an underlayer of a device includes the steps of forming a contact hole, forming a contact hole barrier layer of a barrier material in the contact hole of the device, etching the contact hole barrier layer on the bottom surface of the contact hole, depositing a liner material in the contact hole, and filling the contact hole with a conductive material. A device such as a semiconductor, passive device, capacitor or FeRAM is formed in accordance with the method. The portions of the contact hole barrier layer on the side walls of the contact hole inhibit lateral diffusion of hydrogen and/or oxygen. The contact hole barrier layer can be performed after a wet etch process to fill voids in an existing barrier layer caused by that process, or prior to the wet etch process to prevent damage to the existing barrier layer.

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