Formation of a barrier layer for tungsten damascene interconnect

Details Formation of a barrier layer for tungsten damascene interconnect Formation of a barrier layer for tungsten damascene interconnect

1997-08-25

2000-12-26

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257646, 257315, H01L 2358

Patent

active

061664286

ABSTRACT:
A semiconductor device having at least a first and second type of devices formed in the substrate of the semiconductor device and having a hydrogen free barrier layer formed by implanting nitrogen into a layer of amorphous silicon or polysilicon formed on the surface of the semiconductor device. A hydrogen getter layer is formed on the semiconductor device under the barrier layer. The hydrogen getter layer is removed from portions of the semiconductor device on which salicide layers are to be formed.

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J. Givens, S. Geissler, O.Cain, W.Clark, C. Koburger, J.Lee, "A Low-Temperature Local Interconnect Process in a 0.25- micrometer-channel CMOS Logic Technology with Shallow Trench Isolation, " Jun. 7-8, 1994 VMIC Conference 1994 ISMIC-103/94/0043.

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