Formation method of SiGe HBT

Details Formation method of SiGe HBT Formation method of SiGe HBT

2006-05-23

2006-05-23

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S189000, C438S309000

Reexamination Certificate

active

07049240

ABSTRACT:
A method for forming a SiGe HBT, which combines a SEG and Non-SEG growth, is disclosed. The SiGe base layer is deposited by a Non-SEG method. Then, the first-emitter layer is developed directly upon the SiGe base layer that has a good interface quality between the base-emitter. Next, a second poly silicon layer, which has a dopant concentration range within 1E19 to 1E21 (atom/cc), is deposited by SEG method. It not only reduces the resistance of the SiGe base layer, but also avoids the annealing that may influence the performance of the device.

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