Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-04-12
2011-04-12
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257S635000, C257S701000, C257S760000, C257SE21273, C257SE21278, C438S787000, C438S788000
Reexamination Certificate
active
07923384
ABSTRACT:
In a formation method of a porous insulating film by supplying at least organosiloxane and an inert gas to a reaction chamber and forming an insulating film by a plasma vapor deposition method, a partial pressure of the organosiloxane in the reaction chamber is changed by varying a volume ratio of the organosiloxane and the inert gas to be supplied during deposition. Thus, the dielectric constant of the insulating film in the semiconductor device is reduced while the adhesion of the insulating film with other materials is improved. It is desirable that the organosiloxane be cyclic organosiloxane including at least silicon, oxygen, carbon, and hydrogen, and that the total pressure of the reaction chamber be constant during deposition.
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Furutake Naoya
Hayashi Yoshihiro
Tada Munehiro
Takeuchi Tsuneo
McGinn IP Law Group PLLC
NEC Corporation
Sarkar Asok K
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