Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-03
2007-07-03
Fourson, George R. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21175
Reexamination Certificate
active
10746000
ABSTRACT:
A metal element formation method includes a seed layer formation step for forming a seed layer on a treatment surface of a substrate, and a plating formation step for forming a plating layer on the seed layer, wherein in the seed layer formation step, a liquid repellent section is formed on the treatment surface, and a liquid phase method is used to form the seed layer in a region outside the liquid repellent section.
REFERENCES:
patent: 2002/0149118 (2002-10-01), Yamaguchi et al.
patent: 2002/0157610 (2002-10-01), Sekiguchi et al.
patent: 2003/0116439 (2003-06-01), Seo et al.
patent: A 11-238703 (1999-08-01), None
patent: A 2000-228374 (2000-08-01), None
patent: A 2000-260865 (2000-09-01), None
patent: A 2001-127062 (2001-05-01), None
patent: A 2001-181851 (2001-07-01), None
patent: A 2001-284289 (2001-10-01), None
patent: 2001-127062 (2001-11-01), None
patent: A 2001-323381 (2001-11-01), None
patent: A 2002-26017 (2002-01-01), None
patent: A 2002-164635 (2002-06-01), None
Fourson George R.
Oliff & Berridg,e PLC
Parker John M
Seiko Epson Corporation
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