Folded trench and RIE/deposition process for high-value capacito

Details Folded trench and RIE/deposition process for high-value capacito Folded trench and RIE/deposition process for high-value capacito

1997-03-05

1998-11-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257302, 257305, 257532, 257534, 257622, 438 32, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

058380450

ABSTRACT:
Isotropic deposition of a selectively etchable material in an opening in a body of material followed by isotropic deposition of an etch resistant material forms a mask for anisotropic etching of the selectively etchable material at potentially sub-lithographic dimensions to form potentially sub-lithographic features within a trench. This process can be exploited to form a folded trench capacitor in which a trench is formed with one or more upstanding and possibly hollow features therein; effectively multiplying the surface area and or allowing reduced trench depth for a given charge storage capacity or a combination thereof. Further surface treatments such as deposition of hemispherical grain silicon can be used to further enhance the effective area of the trench. Isolation structures of sub-lithographic dimensions can also be formed by depositing appropriate materials within the trenches formed in accordance with the mask.

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