Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-06
2009-12-08
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29257
Reexamination Certificate
active
07629645
ABSTRACT:
An insulated-gate transistor includes a semiconductor layer of a first conductivity type, an insulated gate comprising a trench gate extending into the semiconductor layer, a source and a drain regions of a second conductivity type formed in the semiconductor layer at respective sides of the trench gate, wherein each one of the source and drain regions includes a first doped region, having a first dopant concentration, formed in the semiconductor layer adjacent to the trench gate, said first dopant concentration being such that a breakdown voltage of the junction formed by the first doped region and the semiconductor layer is higher than a predetermined breakdown voltage, and a second doped region, having a second dopant concentration higher than the first dopant concentration, said second doped region being formed in the first doped region and being spaced apart from the trench gate, the second dopant concentration being adapted to form a non-rectifying contact for electrically contacting the first doped region.
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European Search Report for EP 05 10 6115 dated Nov. 28, 2005.
Annese Marco
Montanini Pietro
Zullino Lucia
Budd Paul A
Graybeal Jackson LLP
Jablonski Kevin D.
Jackson, Jr. Jerome
STMicroelectronics S.r.l.
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