Focused ion beam treatment method and semiconductor device...

Details Focused ion beam treatment method and semiconductor device... Focused ion beam treatment method and semiconductor device...

2006-04-11

2006-04-11

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S474000, C438S479000, C438S798000

Reexamination Certificate

active

07026198

ABSTRACT:
A buried oxide layer of an SOI substrate beneath a structure electrically isolated from the rest of a semiconductor device is made to break down so as to open a bias path for the substrate through the structure. It then suffices to connect the electrical ground of the semiconductor device to this bias path so that the ions flow away into the substrate during a focused ion beam treatment of the semiconductor device.

REFERENCES:
patent: 6121668 (2000-09-01), Soderbarg et al.
patent: 6245600 (2001-06-01), Geissler et al.
patent: 6413857 (2002-07-01), Subramanian et al.
patent: 2002/0132395 (2002-09-01), Iyer et al.
French Preliminary Search Report dated Nov. 17, 2003 for French Application No. 03 02008.

Affiliated with

Also associated with

Rating

Focused ion beam treatment method and semiconductor device... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Focused ion beam treatment method and semiconductor device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Focused ion beam treatment method and semiconductor device... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3529838