Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-03-13
2007-03-13
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492210, C250S3960ML
Reexamination Certificate
active
11205086
ABSTRACT:
In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.
REFERENCES:
patent: 6331712 (2001-12-01), Sugiyama et al.
patent: 6414307 (2002-07-01), Gerlach et al.
patent: 2005/0178980 (2005-08-01), Skidmore et al.
patent: 2006/0054840 (2006-03-01), Madokoro et al.
patent: 5-159730 (1993-06-01), None
patent: 3190395 (2001-05-01), None
patent: 2001-160369 (2001-06-01), None
Izawa Shigeru
Kaga Hiroyasu
Madokoro Yuichi
Umemura Kaoru
Souw Bernard
Wells Nikita
LandOfFree
Focused ion beam apparatus and aperture does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Focused ion beam apparatus and aperture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Focused ion beam apparatus and aperture will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3759142