Focused ion beam apparatus

Details Focused ion beam apparatus Focused ion beam apparatus

2011-06-07

2011-06-07

Nguyen, Kiet T (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S309000

Reexamination Certificate

active

07956336

ABSTRACT:
An object of the present invention is to provide a focused ion beam apparatus that is capable of obtaining a much larger beam current and forming a focused ion beam with smaller aberration than a conventional focused ion beam apparatus no matter whether the level of acceleration is high or low. The focused ion beam apparatus according to the present invention includes a liquid metal ion source, an extraction electrode for extracting an ion beam from the liquid metal ion source, an acceleration (ground) electrode for accelerating an ion beam, and an electrostatic lens for converging an ion beam. When the acceleration voltage applied to the liquid metal ion source is lower than an emission threshold voltage of the liquid metal ion source, the voltage of the extraction electrode is at a lower potential than the voltage of the acceleration (ground) electrode. The polarity of a voltage applied to the electrostatic lens changes in accordance with the polarity of a voltage applied to the extraction electrode. The present invention makes it possible to exercise a deceleration mode focusing method at a high acceleration voltage from the dielectric strength voltage of an electrostatic lens and exercise an acceleration mode focusing method at a low acceleration voltage with an electrostatic lens having the same focal length as for the deceleration mode focusing method.

REFERENCES:
patent: 5012109 (1991-04-01), Shichi et al.
Excerpt from “Electron/Ion Beam Optics,” by Katsumi Ura, published by Kyoritsu Shuppan, 1994, pp. 44-45 and 72-73, with English Translation.

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