Focused charged beam apparatus, and its processing and observati

Details Focused charged beam apparatus, and its processing and observati Focused charged beam apparatus, and its processing and observati

1994-02-04

1996-06-11

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250307, 250310, 250311, H01J 3726, H01J 3730

Patent

active

055258069

ABSTRACT:
To process sample of specific portion or position for the transmission electron microscope [TEM] simply to the most suitable or optimal shape, and to confirm the sample thickness of the sample while processing above (on-going confirmation). To make TEM sample through etching by way of irradiation of ion beam 2 onto sample 4, and to confirm processing status of sample by way of irradiating electron beam 7 from horizontal angle to cross-section of sample, and of detecting secondary electron, reflection electron, X ray, and transmission electron with respective detector 5, 9, 10, and 11, and to estimate the thickness of sample in process above since the intensities of these signals above changes due to the thin film thickness of sample.

REFERENCES:
patent: 4219731 (1980-08-01), Migitaka et al.
patent: 5023453 (1991-06-01), Adachi et al.
patent: 5270552 (1993-12-01), Ohnishi et al.
patent: 5331161 (1994-07-01), Ohdomari et al.

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