Focal plane array with charge transfer gate

Details Focal plane array with charge transfer gate Focal plane array with charge transfer gate

1992-01-29

1993-07-06

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257292, 257448, 257290, 2502081, H01L 2714

Patent

active

052256960

ABSTRACT:
A radiation detection system includes an array of radiation detectors disposed on a common substrate of type-n silicon, wherein each detector includes an electrode spaced apart from the silicon by silicon dioxide. Two rows of the detectors are coupled by two rows of transfer gates to a common row of diodes for reading out data from any one or ones of the detectors which are individually addressable by row and column conductors. The transfer gate electrodes of contiguous pixels are connected together to form a row conductor. The gates are electrically activatable to provide electrical connection for receiving data of a detector only during a readout interval, and provide electrical insulation of the detectors at all other times. This inhibits blooming. Detector windows may be fabricated of thinned chrome or aluminum layers, or of polysilicon arranged to provide free spaces through which ultraviolet radiation can propagate into the detector. This allows dual-mode operation for reception of both optical and ultraviolet radiation.

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