Fluorine residue removal after tungsten etchback

Details Fluorine residue removal after tungsten etchback Fluorine residue removal after tungsten etchback

1996-03-29

1998-03-24

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566561, 437192, H01L 2100

Patent

active

057308349

ABSTRACT:
Forming tungsten plugs allows for a conformal step coverage into contacts in semiconductor wafer processing. By rinsing the wafers after the tungsten etchback but before the wafers have a chance to enter an oxygen-containing environment, the amount of fluorine-containing residue removed from the wafer can be increased. In this way, the connection between the tungsten plugs and a metallization layer can be improved.

REFERENCES:
patent: 5200017 (1993-04-01), Kawasaki et al.
Roede, Henk, et al.; "The Effect of Post W-Etchback Cleaning Treatments and Implementation of Refractory Metal Buffer Layers on the Electro-migration Performance of TiN/AlCu/TiN/Ti Metallization Systems"; Procedures MRS Spring Meeting, San Francisco, Apr. 1995.
Mihara, Satoru and Moritaka Nakamura; "Mechansim of Plug Loss Suppression in Tungsten Etcback process by a Redeposition of Titanium reaction Products"; Proc. 10th Symp. on Plasma Processing; Electrochemical Society, Pennington, New Jersey; 1994; pp. 449-459.

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