Fluorine free integrated process for etching aluminum...

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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C216S041000, C216S047000, C216S049000, C216S064000, C216S067000, C216S075000, C216S077000, C134S001100, C134S001200, C134S022100, C134S902000, C438S720000, C438S725000, C438S742000, C438S905000

Reexamination Certificate

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10273580

ABSTRACT:
A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2or Cl2and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2etch and C2H4diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.

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