Fluorine free integrated process for etching aluminum...

Details Fluorine free integrated process for etching aluminum... Fluorine free integrated process for etching aluminum...

2007-09-18

2007-09-18

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S041000, C216S047000, C216S049000, C216S064000, C216S067000, C216S075000, C216S077000, C134S001100, C134S001200, C134S022100, C134S902000, C438S720000, C438S725000, C438S742000, C438S905000

Reexamination Certificate

active

10273580

ABSTRACT:
A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2or Cl2and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2etch and C2H4diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.

REFERENCES:
patent: 4372807 (1983-02-01), Vossen, Jr. et al.
patent: 4511429 (1985-04-01), Mizutani et al.
patent: 4618398 (1986-10-01), Nawata et al.
patent: 5320707 (1994-06-01), Kanekiyo et al.
patent: 5356478 (1994-10-01), Chen et al.
patent: 5468686 (1995-11-01), Kawamoto
patent: 5597444 (1997-01-01), Gilton
patent: 5779926 (1998-07-01), Ma et al.
patent: 5827437 (1998-10-01), Yang et al.
patent: 5994235 (1999-11-01), O'Donnell
patent: 6090717 (2000-07-01), Powell et al.
patent: 6136723 (2000-10-01), Nagase
patent: 6348405 (2002-02-01), Ohuchi
patent: 6683002 (2004-01-01), Chooi et al.
patent: 2002/0142486 (2002-10-01), Yanagawa et al.

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