Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-05-28
2000-12-05
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257752, 257635, H01L 2348, H01L 2352, H01L 2940
Patent
active
061570834
ABSTRACT:
A semiconductor device is manufactured by forming a first fluorine doped plasma silicon oxide film having a high fluorine concentration on first metallic interconnections formed on a semiconductor substrate surface, forming, a second fluorine doped plasma silicon oxide film having a low fluorine concentrations on the first film, and carrying out chemical machine polishing (CMP) only on the second fluorine doped plasma silicon oxide film.
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Hayasaka et al; "Fluorine Doped Si02 for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection"; 1995; pp. 157-159; Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, Osaka.
Ishikawa Hiraku
Usami Tatsuya
Cao Phat X.
Chaudhuri Olik
NEC Corporation
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