Fluorine doped carbon films produced by modification by...

Details Fluorine doped carbon films produced by modification by... Fluorine doped carbon films produced by modification by...

2011-01-25

2011-01-25

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S780000, C438S798000, C257SE23167

Reexamination Certificate

active

07875549

ABSTRACT:
A film forming method includes the steps of forming a F-doped carbon film by using a source gas containing C and F, and modifying the F-doped carbon film by radicals, the source gas having a F/C ratio larger than 1 smaller than 2, the F/C ratio being defined as a ratio of a number of F atoms to a number of C atoms in a source gas molecule.

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