Fluorine-containing base layer for multi-layer resist processes

Radiation imagery chemistry: process – composition – or product th – Imaged product – Multilayer

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430 17, 430 18, 430323, 430325, G03F 726

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active

049785940

ABSTRACT:
A process for forming a pattern on a substrate utilizing photolithographic techniques. In this process a layer of polymeric material containing a fluorine-containing compound is applied over the substrate and cured. A layer of photoresist material is applied over the polymeric material imagewise exposed and developed to reveal the image on the underlying polymeric material. Thereafter, the photoresist is silylated, and the structure is reactive ion etched to transfer the pattern to the underlying substrate. The fluorine component provides an underlying structure free of residue and cracking.

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Dobkin et al., "Plasma Formation of Buffer Layers for Multilayer Resist Structures", IEEE Electron Device Letters vol. EDL2, No. 9, Sep. 1981, pp. 222-224.
Lyman et al., "Lift-Off of Thick Metal Layers Using Multilayer Resist", J. Vac. Sci. Technol., 19(4), Nov./Dec. 1981, pp. 1325-1328.

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