Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2007-05-15
2007-05-15
Lee, Sin (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S325000, C430S326000, C430S907000, C430S910000, C430S921000, C430S925000, C430S330000, C430S313000, C430S331000
Reexamination Certificate
active
10988137
ABSTRACT:
A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula:where R1represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12represents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.
REFERENCES:
patent: 6027856 (2000-02-01), Nozaki et al.
patent: 6074801 (2000-06-01), Iwasa et al.
patent: 6106998 (2000-08-01), Maeda et al.
patent: 6140010 (2000-10-01), Iwasa et al.
patent: 6146806 (2000-11-01), Maeda et al.
patent: 6255041 (2001-07-01), Oomori et al.
patent: 6265135 (2001-07-01), Kodama et al.
patent: 6319650 (2001-11-01), Gelorme et al.
patent: 6503686 (2003-01-01), Fryd et al.
patent: 6511787 (2003-01-01), Harada et al.
patent: 6548219 (2003-04-01), Ito et al.
patent: 6610456 (2003-08-01), Allen et al.
patent: 2002/0061464 (2002-05-01), Aoai et al.
patent: 2002/0155376 (2002-10-01), Hashimoto et al.
patent: 2003/0078352 (2003-04-01), Miyazawa et al.
patent: 2003/0224283 (2003-12-01), Allen et al.
patent: 2003/0235785 (2003-12-01), Barclay et al.
patent: 2004-302189 (2004-10-01), None
Machine-assisted English translation of JP 2004-302189 provided by JPO.
Y.C. Bae, et al. Rejuvenation of 248 nm Resist Backbones for 157 nm Lithography, Journal of Photopolymer Science and Technology, vol. 14, No. 4, pp. 613-620 (2001).
T.H. Fedynyshyn et al., High Resolution Fluorocarbon Based Resist for 157 nm Lithography, Advances in Resist Technology and Processing XVIII, Francis M. Houlihan, ed., Proceedings of SPIE, vol. 4345, pp. 296-307 (2001).
H. Ito, et al. Polymer Design for 157 nm Chemically Amplified Resists, Advances in Resist Technology and Processing XVIII, Francis M. Houlihan, ed. Proceedings of SPIE, vol. 4345, pp. 273-284 (2001).
R.R. Kunz, et al. Experimental VUV Absorbance Study of Fluorine-Functionalized Polystyrenes, Advances in Resist Technology and Processing XVIII, Francis M. Houlihan, ed., Proceedings of SPIE, vol. 4345, pp. 285-295 (2001).
Chen Kuang-Jung J
Khojasteh Mahmoud
Li Wenjie
Patel Kaushal S.
Varanasi Pushkara Rao
Capella Steven
International Business Machines - Corporation
Lee Sin
Pepper Margaret A.
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