Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-10-16
2007-10-16
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S154000, C365S203000
Reexamination Certificate
active
11552791
ABSTRACT:
A method, an apparatus, and a computer program product are provided for flood mode implementation of SRAM cells that employ a continuous bitline local evaluation circuit. Flood mode testing is used to weed out marginal SRAM cells by stressing the SRAM cells. Flood mode is induced by beginning with a normal write operation. After new data values have been forced into the SRAM cells, then the write signal is chopped off. A delay block keeps the wordline signal at the high supply, and the SRAM cells go into flood mode. At this juncture marginal cells can be easily detected and later mapped to redundant cells.
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Adams Chad Allen
Behrends Derick Gardner
Kivimagi Ryan Charles
Gerhardt Diana R.
International Business Machines - Corporation
Nguyen Tuan T.
Sofocleous Alexander
Walder, Jr. Stephen J.
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