Floating source line architecture for non-volatile memory

Details Floating source line architecture for non-volatile memory Floating source line architecture for non-volatile memory

2011-08-23

2011-08-23

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

08004872

ABSTRACT:
A method and apparatus for writing data to a non-volatile memory cell, such as an RRAM memory cell. In some embodiments, a semiconductor array of non-volatile memory cells comprises a resistive sense element (RSE) and a switching device. A RSE of a plurality of memory cells is connected to a bit line while the switching device of a plurality of memory cells is connected to a word line and operated to select a memory cell. A source line is connected to the switching device and connects a series of memory cells together. Further, a driver circuit is connected to the bit line and writes a selected RSE of a selected source line to a selected resistive state by passing a write current along a write current path that passes through the selected RSE and through at least a portion of the remaining RSE connected to the selected source line.

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