Floating isolation gate for DRAM sensing

Details Floating isolation gate for DRAM sensing Floating isolation gate for DRAM sensing

1998-07-28

2000-10-31

Nguyen, Tan T.

Static information storage and retrieval

Read/write circuit

For complementary information

365149, 365207, G11C 700

Patent

active

061412643

ABSTRACT:
A method of operating a sense amplifier comprises floating an isolation gate line signal when a memory cell is being accessed. In one embodiment, the isolation gate is first turned on by biasing the gate line of the isolation gate. Then, the input of a sense amplifier is coupled to a desired memory cell and about the same time, the isolation gate is floated. The isolation gate is at least partially turned off by a reduction in the voltage level of the ISO gateline through capacitance based decay. This at least partially isolates other memory cells and/or circuitry accessed through a set of digit lines, allowing the sense amplifier to more easily sense the state of the desired memory cell. The isolation gate is floated by coupling the gate line of the isolation gate to a high impedance. The sense amplifier may be an N-sense amplifier. The isolation gate is floated prior to sense amplifier being activated. The voltage level of the ISO signal is reduced by parasitic coupling to other circuitry associated with the sense amplifier. Since the ISO gate is floated prior to the sense amplifier being activated, there is less sensitivity to timing inaccuracies. In addition, a resulting larger differential voltage on the digit lines is more easily and quickly sensed by the sense amplifier.

REFERENCES:
patent: 4991142 (1991-02-01), Wang
patent: 5381364 (1995-01-01), Chern et al.
patent: 5506811 (1996-04-01), McLaury
patent: 5566116 (1996-10-01), Kang
patent: 5835433 (1998-11-01), Casper

Affiliated with

Also associated with

Rating

Floating isolation gate for DRAM sensing does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Floating isolation gate for DRAM sensing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Floating isolation gate for DRAM sensing will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2060880