Floating gate type field effect transistor having control gate a

Details Floating gate type field effect transistor having control gate a Floating gate type field effect transistor having control gate a

1996-05-16

1997-07-22

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257320, H01L 29788

Patent

active

056506490

ABSTRACT:
A floating gate type field effect transistor has a floating gate electrode formed of p-type polysilicon and a control gate electrode capacitively coupled to the floating gate electrode, and an erasing pulse signal is applied to the control gate electrode so that accumulated electrons are drifted in a depletion layer formed in the floating gate electrode toward a lower insulating layer, thereby evacuating the electrons to a silicon substrate without deterioration of the lower insulating layer.

REFERENCES:
patent: 4200841 (1980-04-01), Nagata et al.
patent: 4608585 (1986-08-01), Keshtbod
patent: 5168465 (1992-12-01), Harai
patent: 5260593 (1993-11-01), Lee
patent: 5301150 (1994-04-01), Sullivan et al.
patent: 5414693 (1995-05-01), Ma et al.
Mukherjee et al; "a single transistor EEPROM Cell . . . "; IEDM 1985; pp. 616-619 1985.

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