Floating gate type electrically programmable read only memory ce

Details Floating gate type electrically programmable read only memory ce Floating gate type electrically programmable read only memory ce

1991-10-15

1994-03-01

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257319, 257320, 257324, 257326, H01L 2968, H01L 2934, H01L 2906

Patent

active

052910474

ABSTRACT:
An electrically programmable read only memory device accumulates electrons in a floating gate electrode so as to change the threshold level at a first control gate electrode capacitively coupled with the floating gate electrode, and a second control gate electrode is further capacitively coupled with the floating gate electrode through a composite gate insulating film structure implemented by a silicon nitride film sandwiched between silicon oxide films, when the electrons are evacuated from the floating gate electrode in ultra-violet radiation, the second control gate electrode is biased to a certain voltage level lower than a virgin threshold level provided upon completion of a fabricating process so that the threshold level is lowered rather than the virgin threshold level for speed up of a read-out operation.

REFERENCES:
patent: 4404577 (1983-09-01), Cranford, Jr. et al.
patent: 4630087 (1986-12-01), Momodomi
patent: 5034798 (1991-07-01), Ohsima
patent: 5051794 (1991-09-01), Mori

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